Crack propagation in micro-chevron-test samples of direct bonded silicon-silicon wafers
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چکیده
منابع مشابه
The effect of atmospheric moisture on crack propagation in the interface between directly bonded silicon wafers
Infra-red video sequences were taken of directly bonded silicon wafer pairs undergoing the razor blade crack length test for bond strength in a specially designed jig. A series of tests were carried out under controlled atmospheres of nitrogen at various relative humidities. Analysis of the video images showed that the crack continues to propagate rapidly for several minutes after the blade has...
متن کاملThe effect of atmospheric moisture on crack propagation of the interface between directly bonded silicon wafers
Infra-red video sequences were taken of directly bonded silicon wafer pairs undergoing the razor blade crack length test for bond strength in a specially designed jig. A series of tests were carried out under controlled atmospheres of nitrogen at various relative humidities. Analysis of the video images showed that the crack continues to propagate rapidly for several minutes after the blade has...
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The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures where Si is still in the brittle regime, the strain may accumulate if a microcrack is pinned. If a cr...
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Micro-spectroscopy on silicon wafers and solar cells
Micro-Raman (μRS) and micro-photoluminescence spectroscopy (μPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by μPLS and μRS. μPLS utilizes the carrier diffusion from a po...
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ژورنال
عنوان ژورنال: Frattura ed Integrità Strutturale
سال: 2011
ISSN: 1971-8993
DOI: 10.3221/igf-esis.15.03